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IRF6216TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 150V 2.2A 8-SOIC
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Buying Options
Total Price: USD $0.54
Unit Price: USD $0.5377
≥1 USD $0.5377
≥10 USD $0.4408
≥100 USD $0.4275
≥500 USD $0.41325
≥1000 USD $0.39995
Inventory: 273774
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 3.9878mm
Length 4.9784mm
Height 1.75mm

Technical

Nominal Vgs 5 V
Max Junction Temperature (Tj) 150°C
Recovery Time 120 ns
Dual Supply Voltage 150V
Drain to Source Breakdown Voltage -150V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage -5V
Continuous Drain Current (ID) -2.2A
Turn-Off Delay Time 33 ns
Fall Time (Typ) 26 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 15 ns
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Input Capacitance (Ciss) (Max) @ Vds 1280pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 240m Ω @ 1.3A, 10V
Transistor Application SWITCHING
FET Type P-Channel
Turn On Delay Time 18 ns
Power Dissipation 2.5W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Number of Channels 1
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Resistance 240mOhm
ECCN Code EAR99
Termination SMD/SMT
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
JESD-609 Code e3
Series HEXFET?
Published 2005
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin

Supply Chain

Factory Lead Time 14 Weeks

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