Max Junction Temperature (Tj) 150°C
Drain to Source Breakdown Voltage -150V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -2.2A
Turn-Off Delay Time 33 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Input Capacitance (Ciss) (Max) @ Vds 1280pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 240m Ω @ 1.3A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ