IRF6201TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 27A 8-SOIC
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Buying Options
Total Price: USD $14.77
Unit Price: USD $14.7668
≥1 USD $14.7668
≥10 USD $12.1163
≥100 USD $11.7382
≥500 USD $11.35915
≥1000 USD $10.9801
Inventory: 1109
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 29 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.45m Ω @ 27A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 8555pF @ 16V
Current - Continuous Drain (Id) @ 25°C 27A Ta
Gate Charge (Qg) (Max) @ Vgs 195nC @ 4.5V
Rise Time 100 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 265 ns
Turn-Off Delay Time 320 ns
Continuous Drain Current (ID) 27A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.00245Ohm
Drain to Source Breakdown Voltage 20V
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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