IRF6201PBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
HEXFET? Tube Surface Mount N-Channel Mosfet Transistor 27A Ta 27A 2.5W 265ns
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Buying Options
Total Price: USD $14.77
Unit Price: USD $14.7668
≥1 USD $14.7668
≥10 USD $12.1163
≥100 USD $11.7382
≥500 USD $11.35915
≥1000 USD $10.9801
Inventory: 2483
Minimum: 1
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Technical Details
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 29 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.45m Ω @ 27A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 8555pF @ 16V
Current - Continuous Drain (Id) @ 25°C 27A Ta
Gate Charge (Qg) (Max) @ Vgs 195nC @ 4.5V
Rise Time 100ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 265 ns
Turn-Off Delay Time 320 ns
Continuous Drain Current (ID) 27A
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.00245Ohm
Drain to Source Breakdown Voltage 20V
Recovery Time 120 ns
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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