IRF60B217
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 60A
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Buying Options
Total Price: USD $0.68
Unit Price: USD $0.6776
≥1 USD $0.6776
Inventory: 1122
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series StrongIRFET?
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 36A, 10V
Vgs(th) (Max) @ Id 3.7V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2230pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 60A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.009Ohm
Pulsed Drain Current-Max (IDM) 225A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 124 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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