IRF5805
RoHS
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Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 30V 3.8A 6-TSOP
PDF
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Buying Options
Total Price: USD $0.16
Unit Price: USD $0.16055
≥1 USD $0.16055
≥10 USD $0.13205
≥100 USD $0.12825
≥500 USD $0.1235
≥1000 USD $0.1197
Inventory: 1072
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Surface Mount YES
Transistor Element Material SILICON
Technical
Packaging Tube
Published 2003
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 98m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 511pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.8A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 3.8A
Drain-source On Resistance-Max 0.098Ohm
Pulsed Drain Current-Max (IDM) 15A
DS Breakdown Voltage-Min 30V
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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