Max Junction Temperature (Tj) 150°C
Drain to Source Breakdown Voltage -40V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -3.4A
Turn-Off Delay Time 88 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.4A Ta
Input Capacitance (Ciss) (Max) @ Vds 1110pF @ 25V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 112m Ω @ 3.4A, 10V
Power Dissipation-Max 2W Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ