IRF5802TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 0.9A 6-TSOP
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Buying Options
Total Price: USD $0.35
Unit Price: USD $0.3496
≥1 USD $0.3496
≥10 USD $0.2869
≥100 USD $0.2774
≥500 USD $0.26885
≥1000 USD $0.2603
≥1200 USD $0.23275
Inventory: 196537
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 1.2Ohm
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 900mA
Number of Elements 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 540mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 88pF @ 25V
Current - Continuous Drain (Id) @ 25°C 900mA Ta
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V
Rise Time 1.6 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 9.2 ns
Turn-Off Delay Time 7.5 ns
Continuous Drain Current (ID) 900mA
Threshold Voltage 5.5V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.9A
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 7A
Dual Supply Voltage 150V
Avalanche Energy Rating (Eas) 9.5 mJ
Nominal Vgs 5.5 V
Dimensions
Height 900μm
Length 2.9972mm
Width 1.4986mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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