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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 9.7A TO-220AB
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Buying Options
Total Price: USD $0.81
Unit Price: USD $0.8096
≥1 USD $0.8096
≥10 USD $0.649792
≥100 USD $0.514976
≥500 USD $0.436498
≥1000 USD $0.355573
≥3000 USD $0.334726
Inventory: 3744
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.69mm
Length 10.5156mm
Height 15.24mm

Technical

Nominal Vgs 4 V
Recovery Time 150 ns
Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.2Ohm
Drain Current-Max (Abs) (ID) 9.5A
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 4V
Continuous Drain Current (ID) 9.7A
Turn-Off Delay Time 32 ns
Fall Time (Typ) 23 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 23 ns
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9.7A Tc
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 200m Ω @ 5.7A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 4.5 ns
Case Connection DRAIN
Power Dissipation 48W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 48W Tc
Number of Elements 1
Lead Pitch 2.54mm
Current Rating 9.7A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 100V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?
Published 1998
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin

Supply Chain

Factory Lead Time 12 Weeks

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