Max Junction Temperature (Tj) 175°C
Pulsed Drain Current-Max (IDM) 260A
Drain to Source Breakdown Voltage -55V
Drain-source On Resistance-Max 0.02Ohm
Drain Current-Max (Abs) (ID) 64A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -74A
Turn-Off Delay Time 61 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 55V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Current - Continuous Drain (Id) @ 25°C 74A Tc
Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 20m Ω @ 38A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 200W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 250
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ