IRF3805STRLPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 75A D2PAK
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 9.65mm
Length 10.668mm
Height 4.699mm
Technical
Nominal Vgs 4 V
Avalanche Energy Rating (Eas) 940 mJ
Pulsed Drain Current-Max (IDM) 890A
Drain to Source Breakdown Voltage 55V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4V
Continuous Drain Current (ID) 75A
Turn-Off Delay Time 87 ns
Fall Time (Typ) 87 ns
Forward Voltage 1.3V
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 20 ns
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Input Capacitance (Ciss) (Max) @ Vds 7960pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 3.3m Ω @ 75A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 20 ns
Case Connection DRAIN
Power Dissipation 130W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 75A
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 55V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Resistance 3.3MOhm
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series HEXFET?
Published 2004
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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