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IRF3710ZSTRRPBF

Infineon Technologies
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 59A D2PAK
PDF
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Buying Options
Total Price: USD $4.75
Unit Price: USD $4.75285
≥1 USD $4.75285
≥10 USD $3.89975
≥100 USD $3.77815
≥500 USD $3.65655
≥1000 USD $3.534
Inventory: 1098
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 160W Tc
Element Configuration Single
Power Dissipation 160W
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 18mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 59A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 77ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) 59A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 2.9nF
Drain to Source Resistance 18mOhm
Rds On Max 18 mΩ

Dimensions

Height 4.826mm
Length 10.668mm
Width 9.65mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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