IRF3710ZGPBF
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 59A TO-220AB
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 160W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 18m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 250mA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 59A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
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