IRF3709ZSPBF
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 87A D2PAK
PDF
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Buying Options
Total Price: USD $0.26
Unit Price: USD $0.259225
≥1 USD $0.259225
≥10 USD $0.244551
≥100 USD $0.230713
≥500 USD $0.217656
≥1000 USD $0.205331
Inventory: 1141
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 6.3MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 87A
Number of Elements 1
Power Dissipation-Max 79W Tc
Element Configuration Single
Power Dissipation 79mW
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2130pF @ 15V
Current - Continuous Drain (Id) @ 25°C 87A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 41ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.7 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 87A
Threshold Voltage 2.25V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.13nF
Recovery Time 24 ns
Drain to Source Resistance 6.3mOhm
Rds On Max 6.3 mΩ
Nominal Vgs 2.25 V
Dimensions
Height 4.826mm
Length 10.668mm
Width 9.65mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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