IRF3709PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 90A TO-220AB
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Total Price: USD $0.55
Unit Price: USD $0.5456
≥1 USD $0.5456
Inventory: 957
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.69mm
Length 10.5156mm
Height 8.763mm
Technical
Nominal Vgs 3 V
Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 75A
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 3V
Continuous Drain Current (ID) 90A
Turn-Off Delay Time 21 ns
Fall Time (Typ) 9.2 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 171 ns
Gate Charge (Qg) (Max) @ Vgs 41nC @ 5V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Input Capacitance (Ciss) (Max) @ Vds 2672pF @ 16V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 9m Ω @ 15A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 11 ns
Case Connection DRAIN
Power Dissipation 120W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.1W Ta 120W Tc
Number of Elements 1
Current Rating 90A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 30V
Subcategory FET General Purpose Power
Resistance 9Ohm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Series HEXFET?
Published 2001
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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