IRF3708
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 62A TO-220AB
PDF
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Buying Options
Total Price: USD $9.18
Unit Price: USD $9.18365
≥1 USD $9.18365
≥10 USD $7.5354
≥100 USD $7.2998
≥500 USD $7.0642
≥1000 USD $6.8286
Inventory: 1131
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 213 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 248A
Drain-source On Resistance-Max 0.012Ohm
Drain Current-Max (Abs) (ID) 62A
JEDEC-95 Code TO-220AB
Vgs (Max) ±12V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 62A Tc
Input Capacitance (Ciss) (Max) @ Vds 2417pF @ 15V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 12m Ω @ 15A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 87W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2000
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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