IRF3706SPBF
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 77A D2PAK
PDF
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Buying Options
Total Price: USD $6.06
Unit Price: USD $6.06195
≥1 USD $6.06195
≥10 USD $4.9742
≥100 USD $4.8184
≥500 USD $4.6626
≥1000 USD $4.50775
Inventory: 1194
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 8.5MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 77A
Number of Elements 1
Power Dissipation-Max 88W Tc
Element Configuration Single
Power Dissipation 88W
Turn On Delay Time 6.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 10V
Current - Continuous Drain (Id) @ 25°C 77A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Rise Time 87ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Vgs (Max) ±12V
Fall Time (Typ) 4.8 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 77A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 2.41nF
Drain to Source Resistance 10.5mOhm
Rds On Max 8.5 mΩ
Nominal Vgs 2 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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