Drain to Source Resistance 10.5mOhm
Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 77A
Turn-Off Delay Time 17 ns
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 77A Tc
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 8.5mOhm @ 15A, 10V
Element Configuration Single
Power Dissipation-Max 88W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ