Pulsed Drain Current-Max (IDM) 260A
Drain to Source Breakdown Voltage 20V
Drain Current-Max (Abs) (ID) 42A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 67A
Turn-Off Delay Time 11 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 67A Tc
Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 10V
Vgs(th) (Max) @ Id 2.55V @ 250μA
Rds On (Max) @ Id, Vgs 7.9m Ω @ 21A, 10V
Transistor Application SWITCHING
Turn On Delay Time 8.9 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 57W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ