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IRF3704ZSPBF

Infineon Technologies
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 67A D2PAK
PDF
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Buying Options
Total Price: USD $0.23
Unit Price: USD $0.23085
≥1 USD $0.23085
≥10 USD $0.19
≥100 USD $0.18335
≥500 USD $0.17765
≥1000 USD $0.17195
Inventory: 25406
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 9.65mm
Length 10.67mm
Height 4.83mm

Technical

Nominal Vgs 2.1 V
Recovery Time 17 ns
Pulsed Drain Current-Max (IDM) 260A
Drain to Source Breakdown Voltage 20V
Drain Current-Max (Abs) (ID) 42A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 67A
Turn-Off Delay Time 11 ns
Fall Time (Typ) 4.2 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 38 ns
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 67A Tc
Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 10V
Vgs(th) (Max) @ Id 2.55V @ 250μA
Rds On (Max) @ Id, Vgs 7.9m Ω @ 21A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 8.9 ns
Case Connection DRAIN
Power Dissipation 57W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 57W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 67A
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 20V
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Resistance 7.9MOhm
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series HEXFET?
Published 2004
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

Alternative Model

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