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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 210A TO-220AB
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Total Price: USD $1.58
Unit Price: USD $1.584
≥1 USD $1.584
Inventory: 1103
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.69mm
Length 10.5156mm
Height 15.24mm

Technical

Nominal Vgs 4 V
Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 75A
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 4V
Continuous Drain Current (ID) 210A
Turn-Off Delay Time 53 ns
Fall Time (Typ) 24 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 7V 10V
Rise Time 123 ns
Gate Charge (Qg) (Max) @ Vgs 209nC @ 10V
Current - Continuous Drain (Id) @ 25°C 210A Tc
Input Capacitance (Ciss) (Max) @ Vds 8250pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 2.8m Ω @ 76A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 18 ns
Case Connection DRAIN
Power Dissipation 230W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.8W Ta 230W Tc
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 210A
Peak Reflow Temperature (Cel) 250
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 30V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Resistance 2.8Ohm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series HEXFET?
Published 2004
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin

Supply Chain

Factory Lead Time 12 Weeks

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