IRF3610STRLPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 103A D2PAK
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Buying Options
Total Price: USD $1.99
Unit Price: USD $1.9855
≥1 USD $1.9855
≥10 USD $1.62925
≥100 USD $1.57795
≥500 USD $1.52665
≥1000 USD $1.4763
Inventory: 1091
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Technical
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation 333W
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.6m Ω @ 62A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5380pF @ 25V
Current - Continuous Drain (Id) @ 25°C 103A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Drain to Source Voltage (Vdss) 100V
Continuous Drain Current (ID) 103A
Drain-source On Resistance-Max 0.0116Ohm
Pulsed Drain Current-Max (IDM) 410A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 460 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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