IRF3305PBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 75A TO-220AB
PDF
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Buying Options
Total Price: USD $0.5
Unit Price: USD $0.4978
≥1 USD $0.4978
≥10 USD $0.4085
≥100 USD $0.39615
≥500 USD $0.38285
≥1000 USD $0.3705
Inventory: 16986
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 4.826mm
Length 10.668mm
Height 16.51mm
Technical
Avalanche Energy Rating (Eas) 860 mJ
Pulsed Drain Current-Max (IDM) 560A
Drain to Source Breakdown Voltage 55V
Drain-source On Resistance-Max 0.008Ohm
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 75A
Turn-Off Delay Time 43 ns
Fall Time (Typ) 34 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 88ns
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Input Capacitance (Ciss) (Max) @ Vds 3650pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 8m Ω @ 75A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 16 ns
Case Connection DRAIN
Power Dissipation 330W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 330W Tc
Number of Elements 1
Current Rating 75A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 55V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2004
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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