Max Junction Temperature (Tj) 175°C
Avalanche Energy Rating (Eas) 264 mJ
Drain to Source Breakdown Voltage 55V
Drain Current-Max (Abs) (ID) 75A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 110A
Turn-Off Delay Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Input Capacitance (Ciss) (Max) @ Vds 3247pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 8m Ω @ 62A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 200W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ