Avalanche Energy Rating (Eas) 264 mJ
Drain to Source Breakdown Voltage 55V
Drain-source On Resistance-Max 0.008Ohm
Drain Current-Max (Abs) (ID) 75A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 110A
Turn-Off Delay Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Input Capacitance (Ciss) (Max) @ Vds 3247pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 8m Ω @ 62A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 200W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature -55°C~175°C TJ