Time@Peak Reflow Temperature-Max (s) 30
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.3m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 540 mJ
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ