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RoHS
RoHS RoHS compliant
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 75A TO-220-3
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Buying Options
Total Price: USD $2.1
Unit Price: USD $2.0976
≥1 USD $2.0976
≥10 USD $1.7214
≥100 USD $1.66725
≥500 USD $1.61405
≥1000 USD $1.5599
Inventory: 1183
Minimum: 1
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Technical Details

Technical

Continuous Drain Current (ID) 75A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 540 mJ
Turn-Off Delay Time 130 ns
Fall Time (Typ) 130 ns
Rise Time 120 ns
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Input Capacitance (Ciss) (Max) @ Vds 6450pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 2.3m Ω @ 75A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 13 ns
Case Connection DRAIN
Power Dissipation 330W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 75A
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 40V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series HEXFET?
Published 2003
Packaging Tube
Operating Temperature -55°C~175°C TJ

Dimensions

Height 9.652mm
Length 10.668mm
Width 4.826mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 12 Weeks

Alternative Model

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