IRF200P222
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 182A TO247AC
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Buying Options
Total Price: USD $8.36
Unit Price: USD $8.36
≥1 USD $8.36
≥10 USD $6.67568
≥100 USD $5.973
≥500 USD $5.270267
≥1000 USD $4.743244
Inventory: 1022
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Height 24.99mm
Technical
Max Junction Temperature (Tj) 175°C
Pulsed Drain Current-Max (IDM) 728A
Drain to Source Breakdown Voltage 200V
Drain-source On Resistance-Max 0.0066Ohm
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-247AC
Continuous Drain Current (ID) 182A
Turn-Off Delay Time 77 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 203nC @ 10V
Current - Continuous Drain (Id) @ 25°C 182A Tc
Input Capacitance (Ciss) (Max) @ Vds 9820pF @ 50V
Vgs(th) (Max) @ Id 4V @ 270μA
Rds On (Max) @ Id, Vgs 6.6m Ω @ 82A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 25 ns
Case Connection DRAIN
Power Dissipation 556W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 556W Tc
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series StrongIRFET?
Published 2013
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-247-3
Mounting Type Through Hole
Supply Chain
Factory Lead Time 26 Weeks
Alternative Model
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