IRF200B211
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Single N-Channel 200 V 170 mOhm 15.3 nC HEXFET? Power Mosfet - TO-220-3
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Buying Options
Total Price: USD $1.3
Unit Price: USD $1.3024
≥1 USD $1.3024
≥10 USD $1.047024
≥100 USD $0.829664
≥500 USD $0.703226
≥1000 USD $0.572854
≥3000 USD $0.539273
Inventory: 1131
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series HEXFET?, StrongIRFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 170mOhm
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 80W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 170m Ω @ 7.2A, 10V
Vgs(th) (Max) @ Id 4.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 12A
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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