IRF1902GPBF
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET,20V,4.2A,85 MOHM,5 NC QG,SO-8,HALOGEN-FREE
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2.5W
Technology MOSFET (Metal Oxide)
Power Dissipation 2.5W
Turn On Delay Time 5.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 85mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Rise Time 13ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 4.2A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 310pF
Drain to Source Resistance 85mOhm
Rds On Max 85 mΩ
Dimensions
Height 1.4986mm
Width 3.9878mm
Compliance
RoHS Status RoHS Compliant
Alternative Model
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