IRF1404ZSTRRPBF
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 180A D2PAK
PDF
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Buying Options
Total Price: USD $1.59
Unit Price: USD $1.58555
≥1 USD $1.58555
≥10 USD $1.3015
≥100 USD $1.26065
≥500 USD $1.2198
≥1000 USD $1.17895
Inventory: 1119
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 200W Tc
Power Dissipation 200W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 110ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 58 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 190A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Input Capacitance 4.34nF
Drain to Source Resistance 3.7mOhm
Rds On Max 3.7 mΩ
Dimensions
Height 4.826mm
Length 10.668mm
Width 9.65mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
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