Max Junction Temperature (Tj) 175┬?C
Avalanche Energy Rating (Eas) 620 mJ
Pulsed Drain Current-Max (IDM) 808A
Drain to Source Breakdown Voltage 40V
Drain Current-Max (Abs) (ID) 75A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 202A
Turn-Off Delay Time 46 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 196nC @ 10V
Current - Continuous Drain (Id) @ 25┬?C 202A Tc
Input Capacitance (Ciss) (Max) @ Vds 5669pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250╬╝A
Rds On (Max) @ Id, Vgs 4m ╬? @ 121A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 333W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55┬?C~175┬?C TJ