IRF1312PBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 80V 95A TO-220AB
PDF
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Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Inventory: 16370
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 10Ohm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 80V
Technology MOSFET (Metal Oxide)
Current Rating 95A
Number of Elements 1
Power Dissipation-Max 3.8W Ta 210W Tc
Element Configuration Single
Power Dissipation 210W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10mOhm @ 57A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 95A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 51ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 51 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 95A
Threshold Voltage 5.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Dual Supply Voltage 80V
Input Capacitance 5.45nF
Rds On Max 10 mΩ
Nominal Vgs 5.5 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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