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IRF1018ESTRLPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 79A D2PAK
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Buying Options
Total Price: USD $1.41
Unit Price: USD $1.408
≥1 USD $1.408
≥10 USD $1.15368
≥100 USD $0.897424
Inventory: 1237
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 9.65mm
Length 10.668mm
Height 4.826mm

Technical

Nominal Vgs 4 V
Avalanche Energy Rating (Eas) 88 mJ
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4V
Continuous Drain Current (ID) 79A
Turn-Off Delay Time 55 ns
Fall Time (Typ) 46 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 35 ns
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Current - Continuous Drain (Id) @ 25°C 79A Tc
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 50V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 8.4m Ω @ 47A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 13 ns
Case Connection DRAIN
Power Dissipation 110W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 110W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Resistance 8.4MOhm
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series HEXFET?
Published 2008
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 12 Weeks

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