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IRF1018ESLPBF

Infineon Technologies
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 79A TO-262
PDF
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Buying Options
Total Price: USD $0.61
Unit Price: USD $0.60895
≥1 USD $0.60895
≥10 USD $0.4997
≥100 USD $0.48355
≥500 USD $0.46835
≥1000 USD $0.45315
Inventory: 16799
Minimum: 1
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 110W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.4m Ω @ 47A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 50V
Current - Continuous Drain (Id) @ 25°C 79A Tc
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Rise Time 35 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 79A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0084Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 88 mJ
Recovery Time 39 ns

Dimensions

Height 9.65mm
Length 10.668mm
Width 4.826mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant

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