IRF1018EPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 79A TO-220AB
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Buying Options
Total Price: USD $1.07
Unit Price: USD $1.0736
≥1 USD $1.0736
≥10 USD $0.87736
≥100 USD $0.682352
≥500 USD $0.578406
≥1000 USD $0.47117
≥3000 USD $0.443555
Inventory: 3781
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.826mm
Length 10.668mm
Height 9.017mm
Technical
Recovery Time 39 ns
Avalanche Energy Rating (Eas) 88 mJ
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 4V
Continuous Drain Current (ID) 79A
Turn-Off Delay Time 55 ns
Fall Time (Typ) 46 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 35 ns
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Current - Continuous Drain (Id) @ 25°C 79A Tc
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 50V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 8.4m Ω @ 47A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 13 ns
Case Connection DRAIN
Power Dissipation 110W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 110W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 8.4MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?
Published 2002
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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