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IRF1010EZPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 75A TO-220AB
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Buying Options
Total Price: USD $1.43
Unit Price: USD $1.4256
≥1 USD $1.4256
≥10 USD $1.144176
≥100 USD $0.906752
≥500 USD $0.768574
≥1000 USD $0.626076
≥3000 USD $0.58938
Inventory: 1203
Minimum: 1
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Technical Details

Compliance

Lead Free Contains Lead, Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.826mm
Length 10.668mm
Height 9.017mm

Technical

Nominal Vgs 4 V
Avalanche Energy Rating (Eas) 99 mJ
Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 4V
Continuous Drain Current (ID) 75A
Turn-Off Delay Time 38 ns
Fall Time (Typ) 54 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 90 ns
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Input Capacitance (Ciss) (Max) @ Vds 2810pF @ 25V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 8.5m Ω @ 51A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 19 ns
Case Connection DRAIN
Power Dissipation 140W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 140W Tc
Number of Elements 1
Current Rating 75A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 60V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Resistance 8.5MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?
Published 2004
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 12 Weeks

Alternative Model

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