IRF100B201
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Single N-Channel 100 V 4.2 mOhm 170 nC HEXFET? Power Mosfet - TO-220-3
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Buying Options
Total Price: USD $3.16
Unit Price: USD $3.1592
≥1 USD $3.1592
≥10 USD $2.502544
≥100 USD $2.145088
≥500 USD $1.906731
≥1000 USD $1.632629
≥3000 USD $1.537298
Inventory: 2472
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Continuous Drain Current (ID) 192A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V
Current - Continuous Drain (Id) @ 25°C 192A Tc
Input Capacitance (Ciss) (Max) @ Vds 9500pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 4.2m Ω @ 115A, 10V
FET Type N-Channel
Power Dissipation-Max 441W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?, StrongIRFET?
Published 2013
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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