IPW65R110CFDFKSA2
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
HIGH POWER_LEGACY
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Current - Continuous Drain (Id) @ 25°C 31.2A Tc
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 100V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Rds On (Max) @ Id, Vgs 110m Ω @ 12.7A, 10V
FET Type N-Channel
Power Dissipation-Max 277.8W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series CoolMOS? CFD2
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-247-3
Mounting Type Through Hole
Supply Chain
Factory Lead Time 18 Weeks
Alternative Model
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