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IPW65R045C7FKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 46A TO-247-3
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Buying Options
Total Price: USD $10.27
Unit Price: USD $10.2696
≥1 USD $10.2696
≥10 USD $8.31629
≥100 USD $7.82716
≥500 USD $7.093337
≥1000 USD $6.506298
Inventory: 2499
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Dimensions

Height 25.4mm

Technical

Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 249 mJ
Drain to Source Breakdown Voltage 650V
Drain-source On Resistance-Max 0.045Ohm
Max Dual Supply Voltage 650V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 46A
Turn-Off Delay Time 82 ns
Fall Time (Typ) 7 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 14ns
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Vgs(th) (Max) @ Id 4V @ 1.25mA
Rds On (Max) @ Id, Vgs 45m Ω @ 24.9A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 20 ns
Case Connection DRAIN
Power Dissipation 227W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 227W Tc
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Terminal Finish Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series CoolMOS? C7
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 18 Weeks

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