Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 249 mJ
Drain to Source Breakdown Voltage 650V
Drain-source On Resistance-Max 0.045Ohm
Max Dual Supply Voltage 650V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 46A
Turn-Off Delay Time 82 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Vgs(th) (Max) @ Id 4V @ 1.25mA
Rds On (Max) @ Id, Vgs 45m Ω @ 24.9A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 227W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ