IPSH4N03LA G
RoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Stub Leads, IPak
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 90A IPAK
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 150 mJ
DS Breakdown Voltage-Min 25V
Pulsed Drain Current-Max (IDM) 360A
Drain-source On Resistance-Max 0.0044Ohm
Drain Current-Max (Abs) (ID) 90A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 5V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 15V
Vgs(th) (Max) @ Id 2V @ 40μA
Rds On (Max) @ Id, Vgs 4.4m Ω @ 60A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 94W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish MATTE TIN
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
JESD-609 Code e3
Series OptiMOS?
Published 2008
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-251-3 Stub Leads, IPak
Mounting Type Through Hole
Alternative Model
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