IPSA70R950CEAKMA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Stub Leads, IPak
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 700V 8.7A TO251-3
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Buying Options
Total Price: USD $1.48
Unit Price: USD $1.480316
≥1 USD $1.480316
≥10 USD $1.396526
≥100 USD $1.317475
≥500 USD $1.242904
≥1000 USD $1.172548
Inventory: 1112
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 94W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 328pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8.7A Tc
Gate Charge (Qg) (Max) @ Vgs 15.3nC @ 10V
Drain to Source Voltage (Vdss) 700V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.95Ohm
Pulsed Drain Current-Max (IDM) 12A
DS Breakdown Voltage-Min 700V
Avalanche Energy Rating (Eas) 50 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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