IPP80N06S2L07AKSA2
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 80A TO220-3
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Total Price: USD $2.82
Unit Price: USD $2.8248
≥1 USD $2.8248
≥10 USD $2.236256
≥100 USD $1.916728
Inventory: 224
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 450 mJ
Drain-source On Resistance-Max 0.01Ohm
Max Dual Supply Voltage 55V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 80A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 3160pF @ 25V
Vgs(th) (Max) @ Id 2V @ 150μA
Rds On (Max) @ Id, Vgs 7m Ω @ 60A, 10V
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 210W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Additional Feature LOGIC LEVEL COMPATIBLE
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Series OptiMOS?
Published 2006
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 10 Weeks
Alternative Model
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