IPP60R160P7XKSA1
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
HIGH POWER_NEW
PDF
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Buying Options
Total Price: USD $2.68
Unit Price: USD $2.68241
≥1 USD $2.68241
≥10 USD $2.530574
≥100 USD $2.387336
≥500 USD $2.252201
≥1000 USD $2.124724
Inventory: 1115
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Technical
Operating Temperature -55°C~150°C TJ
Series CoolMOS? P7
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 81W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 160m Ω @ 6.3A, 10V
Vgs(th) (Max) @ Id 4V @ 350μA
Input Capacitance (Ciss) (Max) @ Vds 1317pF @ 400V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Alternative Model
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