IPP60R070CFD7XKSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH TO220-3
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Buying Options
Total Price: USD $5.71
Unit Price: USD $5.7112
≥1 USD $5.7112
≥10 USD $4.523728
≥100 USD $3.877544
≥500 USD $3.446696
≥1000 USD $2.95123
≥3000 USD $2.778899
Inventory: 978
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 151 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 129A
Drain-source On Resistance-Max 0.07Ohm
Drain Current-Max (Abs) (ID) 31A
JEDEC-95 Code TO-220AB
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Input Capacitance (Ciss) (Max) @ Vds 2721pF @ 400V
Vgs(th) (Max) @ Id 4.5V @ 760μA
Rds On (Max) @ Id, Vgs 70m Ω @ 15.1A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 156W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series CoolMOS? CFD7
Published 2014
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Supply Chain
Factory Lead Time 18 Weeks
Alternative Model
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