IPP50R299CPHKSA1
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220AB
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package PG-TO220-3-1
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series CoolMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 104W Tc
Power Dissipation 104W
Turn On Delay Time 35 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440μA
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 100V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 550V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.19nF
Rds On Max 299 mΩ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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