IPP100N06S205AKSA2
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
OptiMOS? Tube Through Hole N-Channel Mosfet Transistor 100A Tc 100A 300W Tc 10V
PDF
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Buying Options
Total Price: USD $1.34
Unit Price: USD $1.34179
≥1 USD $1.34179
≥10 USD $1.265838
≥100 USD $1.194195
≥500 USD $1.126599
≥1000 USD $1.062823
Inventory: 1085
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 6.000006g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series OptiMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5110pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 100A
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.005Ohm
Pulsed Drain Current-Max (IDM) 400A
Compliance
RoHS Status RoHS Compliant
Lead Free Contains Lead
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