IPP04CN10NG
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 100A 3.9mOhms
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Buying Options
Total Price: USD $4.67
Unit Price: USD $4.67495
≥1 USD $4.67495
≥10 USD $3.8361
≥100 USD $3.7164
≥500 USD $3.5967
≥1000 USD $3.47605
Inventory: 1150
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 1000 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 400A
Drain-source On Resistance-Max 0.0042Ohm
Drain Current-Max (Abs) (ID) 100A
JEDEC-95 Code TO-220AB
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 4.2m Ω @ 100A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 300W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) 260
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish MATTE TIN
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series OptiMOS?
Published 2010
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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