IPN60R2K1CEATMA1
RoHS 
RoHS compliant
RoHS compliantPackage SOT-223-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET NCH 600V 3.7A SOT223
PDF
/
Buying Options
Total Price: USD $0.48
Unit Price: USD $0.484
≥1 USD $0.484
≥10 USD $0.41712
≥100 USD $0.289784
≥500 USD $0.226248
≥1000 USD $0.183902
Inventory: 1280
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-223-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 5W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1 Ω @ 800mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 60μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3.7A Tc
Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 3.7A
Threshold Voltage 3V
DS Breakdown Voltage-Min 600V
FET Feature Super Junction
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
IPN60R2K1CEATMA1+price,IPN60R2K1CEATMA1+datasheet,IPN60R2K1CEATMA1+in stock,buy+IPN60R2K1CEATMA1,finder+IPN60R2K1CEATMA1,IPN60R2K1CEATMA1+tutorials,IPN60R2K1CEATMA1+download