IPI100N06S3-03
RoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 100A I2PAK
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series OptiMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating 100A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 230μA
Input Capacitance (Ciss) (Max) @ Vds 21620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 480nC @ 10V
Rise Time 67ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 77 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0033Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 2390 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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