IPI072N10N3GXK
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 80A TO262-3
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS? 3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.2m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 4910pF @ 50V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 80A
Drain-source On Resistance-Max 0.0072Ohm
Pulsed Drain Current-Max (IDM) 320A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 160 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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