Operating Temperature -55°C~150°C TJ
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 36.7W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3.9A Tc
Gate Charge (Qg) (Max) @ Vgs 14.1nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 3.9A
Drain-source On Resistance-Max 0.95Ohm
Pulsed Drain Current-Max (IDM) 11A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 50 mJ