IPD65R660CFDBTMA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 6A TO252
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Buying Options
Total Price: USD $10.37
Unit Price: USD $10.36545
≥1 USD $10.36545
≥10 USD $8.50535
≥100 USD $8.23935
≥500 USD $7.97335
≥1000 USD $7.70735
Inventory: 1093
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series CoolMOS?
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 62.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 62.5W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 660m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 615pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 8 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.66Ohm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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